Lithography process monitoring method

ABSTRACT

A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.16/227,939, filed Dec. 20, 2018 and issuing as U.S. Pat. No. 10,962,892,which claims the benefit of U.S. Provisional Application No. 62/738,198,filed Sep. 28, 2018, entitled “LITHOGRAPHY PROCESS MONITORING METHOD,”hereby incorporated by reference in their entireties.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. In the course of IC evolution, functional density (i.e., thenumber of interconnected devices per chip area) has generally increasedwhile geometry size (i.e., the smallest component (or line) that can becreated using a fabrication process) has decreased. This scaling downprocess generally provides benefits by increasing production efficiencyand lowering associated costs. However, such scaling down has also beenaccompanied by increased complexity in design and manufacturing ofdevices incorporating these ICs. Parallel advances in manufacturing haveallowed increasingly complex designs to be fabricated with precision andreliability.

For example, some advances compensate for optical effects and processingimperfections that occur near the limits of lithography. In manyexamples, ICs features are defined and formed on a semiconductorsubstrate using a set of photolithographic masks. The masks havepatterns formed by transmissive and/or reflective regions. During aphotolithographic exposure, radiation such as ultraviolet light passesthrough or reflects off the mask before striking a photoresist coatingon the substrate. The mask transfers by exposure the pattern onto thephotoresist, which is then selectively removed to reveal the pattern.The substrate then undergoes processing steps that take advantage of theshape of the remaining photoresist to create circuit features on thesubstrate. When the processing steps are complete, another photoresistis applied and substrate is exposed using the next mask. In this way,the features are layered to produce the final circuit.

When an exposure apparatus illuminates a mask with radiation, it isnecessary to provide a suitable parameters for the radiation—such as thefocal position. Assuring these parameters such as focal position can bea costly and timely expenditure. Thus, improvement in accuratemonitoring of lithography process parameters is desired.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 is a block diagram of a lithography system according to variousembodiments of the present disclosure.

FIG. 2 is a block diagram of another lithography system according tovarious embodiments of the present disclosure.

FIG. 3 is a flow diagram of a method of monitoring a parameter of alithography system according to various embodiments of the presentdisclosure.

FIG. 4 is a flow diagram of a method of preparing a test patternaccording to various embodiments of the present disclosure.

FIGS. 5A and 5B are exemplary test patterns according to variousembodiments of the present disclosure.

FIGS. 6A, 6B, 7A, and 7B are example graphs (or plots) of measurementsof a test pattern and corresponding lithography process parametersaccording to various embodiments of the present disclosure.

FIGS. 8A, 8B, 8C, and 8D are example illumination mode profilesaccording to various embodiments of the present disclosure.

FIG. 9 is a block diagram of a lithographic environment according tovarious embodiments of the present disclosure.

FIGS. 10 and 12 are block diagrams of various aspects of exposure of atest pattern according to various embodiments of the present disclosure.

FIGS. 11A, 11B, and 11C each illustrate measurements obtained fromexemplary test patterns according to various embodiments of the presentdisclosure.

FIG. 13 illustrates a block diagram of a production line implementingthe method of FIG. 3.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the disclosure.Specific examples of components and arrangements are described below tosimplify the present disclosure. These are, of course, merely examplesand are not intended to be limiting. For example, the formation of afirst feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations beyond the extentnoted.

Moreover, the formation of a feature on, connected to, and/or coupled toanother feature in the present disclosure that follows may includeembodiments in which the features are formed in direct contact, and mayalso include embodiments in which additional features may be formedinterposing the features, such that the features may not be in directcontact. In addition, spatially relative terms, for example, “lower,”“upper,” “horizontal,” “vertical,” “above,” “over,” “below,” “beneath,”“up,” “down,” “top,” “bottom,” “right,” “left,” etc. as well asderivatives thereof (e.g., “horizontally,” “downwardly,” “upwardly,”etc.) are used for ease of the present disclosure of one featuresrelationship to another feature. The spatially relative terms areintended to cover different orientations of the device including thefeatures.

The advanced lithography process, method, systems, and materialsdescribed herein can be used in many applications, including fin-typefield effect transistors (FinFETs). For example, the fins may bepatterned to produce relatively close spacing between features, forwhich the disclosure herein is well suited (e.g., for controlling and/ormonitoring such processes). In addition, spacers used in forming fins ofFinFETs, also referred to as mandrels, can be processed usinglithography systems and methods discussed herein.

As feature sizes shrink, differences between mask features and thefeatures formed on (exposed onto) a substrate impart a larger effect ondevice performance. In an example of a simple line, a variety of effectsmay tend to round the line ends rather than produce a crisp corner andmay tend to produce a line of irregular width. These effects may comefrom, for example, the illumination source, the mask, the lithographysystem, the fabrication process (e.g., developing, etching, depositing,etc.), and/or other sources. The impact of these variations may beexacerbated as the size of a feature shrinks because the variationsremain the same or become larger, and thus the imperfection growsrelative to the feature.

To compensate for this, many examples of the present disclosure developa layout of a test pattern to be formed on a mask and, in turn, the testpattern is exposed on a substrate to form a test pattern structure. Thetest pattern structure on the substrate is analyzed to determinemeasurements (e.g., shifting of aspects of the pattern) that can becorrelated to lithography parameter that may be off target. The analysismay include measurement to various dimensions of the test patternstructure that are indicative of a pattern shift that is correlated toor indicative of a lithography parameter offset. Examples of thelithography parameters determined are focus parameters (e.g., bestfocus) and dose parameters. The best focus and/or dose can be modifiedfor future exposures using the analysis of the test structure. In someembodiments, the best focus and/or dose are confirmed by use of the testpattern structure. In some such examples, this allows for a monitoringscheme to be used during production of integrated circuits (ICs). Forexample, an exposure process may form the test pattern structure on asample of substrates where circuit patterns are being also formed.

As discussed below, in order to provide a measurement of the testpattern structure that is indicative of the lithography parameteroffset, the test pattern must be careful designed as well as themeasurements to be taken of said pattern carefully selected. In someembodiments below, the test pattern is designed with respect to use withan asymmetric source of radiation for exposure of the test pattern, eventhough such an illumination profile is not used to expose the mainpattern for the IC devices, i.e., circuit pattern. Rather, anillumination profile providing a symmetric irradiation may be used toexpose circuit pattern on the substrate(s). Thus, in some embodiments,the illumination profile of a given source is simply changed for theexposure of the test pattern, and then returned to its baselineillumination profile after exposure of the test pattern without amovement of the target substrate required.

As also described below, the present disclosure provides a technique formonitoring a lithography exposure process. An example of a system forexposing a target substrate that may be monitored by the methods isdescribed with reference to FIG. 1. In that regard, FIG. 1 is a blockdiagram of a lithography system 100 according to various embodiments ofthe present disclosure. The lithography system 100, which may also bereferred to as a scanner, is operable to perform a lithographic exposureprocess utilizing a characteristic radiation source and exposure mode.In the illustrated embodiments, the lithography system 100 is an extremeultraviolet (EUV) lithography system designed to expose a targetsubstrate using EUV radiation having a wavelength ranging between about1 nm and about 100 nm. In some exemplary embodiments, the lithographysystem 100 includes a radiation source 102 that generates EUV radiationwith a wavelength centered at about 13.5 nm. In one such embodiment, aEUV radiation source 102 utilizes laser-produced plasma (LPP) togenerate the EUV radiation by heating a medium such as droplets of tininto a high-temperature plasma using a laser.

The lithography system 100 may also include an illuminator 104 thatfocuses and shapes the radiation produced by the radiation source 102.The illuminator 104 may include refractive optical components, includingmonolithic lenses and/or array lenses (e.g., zone plates), and mayinclude reflective optical components, including monolithic mirrorsand/or mirror arrays. The number of optical components shown FIG. 1 havebeen reduced for clarity, and in actual embodiments, the illuminator 104includes dozens or even hundreds of lenses and/or mirrors. The opticalcomponents are arranged and aligned to project radiation emitted by theradiation source 102 onto a mask 106 retained in a mask stage 108. Theoptical components of the illuminator 104 may also shape the radiationalong the light path in order to produce a particular illuminationpattern upon the mask 106.

After being absorbed by or reflecting off the mask 106, the radiation isdirected through a projection optics module 110, also referred to as aProjection Optics Box (POB). Similar to the illuminator 104, theprojection optics module 110 may include refractive optical components,including monolithic lenses and/or array lenses (e.g., zone plates), andmay include reflective optical components, including monolithic mirrorsand/or mirror arrays. The optical components of the projection opticsmodule 110 are arranged and aligned to direct radiation reflecting offthe mask 106 and to project it onto a target substrate 112, such as asemiconductor substrate (e.g., semiconductor wafer) or any othersuitable substrate, retained in a substrate stage 114. In addition toguiding the radiation, the optical components of the projection opticsmodule 110 may also enlarge, narrow, focus, and/or otherwise shape theradiation along the radiation path.

Radiation projected by the projection optics module 110 on the substrate112 exposes the substrate 112 by causing changes in a photosensitivematerial disposed on the target substrate. In an example, the substrate112 includes a semiconductor substrate with a photoresist 116. Portionsof the photoresist 116 that are exposed to the radiation undergo achemical transition making them either more or less sensitive to adeveloping process. In an exemplary embodiment, after the exposure, thephotoresist 116 undergoes a post-exposure baking, developing, rinsing,and drying in order to complete the transition. Subsequent processingsteps performed on the substrate 112 may use the pattern of theremaining photoresist 116 to selectively process portions of thesubstrate 112.

As noted above, a number of effects may cause the pattern formed in thephotoresist 116 to differ from the intended pattern. Differences in thepattern may be caused by aspects of the system 100. For example, theillumination provided by the system 100 may vary across a substrate 112or between processing of multiple substrates similar to substrate 112.In other words, even assuming defect-free optics and masks, thecomplexities of the beam paths and other optical effects within thesystem 100 may cause the dose (i.e., the exposure intensity) to varyacross the surface of a given substrate 112 and may cause the dose tovary from substrate to substrate. Similarly, the focus of the projectedfeatures may vary across a substrate 112 and between substrate due tothe beam path, the quality of the optics, variations in the substrate112, irregularities the photoresist 116 surface, environmental factorssuch as vibration, and/or other factors. Accordingly, in the examplebelow, process conditions such as dose variations, focus variations,that impact the features formed in the photoresist 116 are monitored andmodified (if needed) during the systems use for exposure of a givensubstrate 112 or modified for use for processing of a subsequent targetsubstrate.

It is noted that a control system 118 is illustrated in the system 100.The control system 118 may include a control unit that may receive orstore an exposure parameter such as focus value or dose value. Moreover,the control system 118 controls each part of the exposure apparatus ofthe system 100 including the source 102, the stage 114, the illuminator104, projection optics module 110, mask stage 108, and/or othercomponents of the system 100. The control system 118 may be locatedwithin the system 100 or be coupled thereto. Further discussion of acontrol system 902, similar to control system 118, is provided below atFIG. 9.

The mask 106 includes various layers defining a pattern formed on a masksubstrate. The mask 106 has a substrate that may include a Low ThermalExpansion Material (LTEM) such as quartz, LTEM glass, silicon, siliconcarbide, silicon oxide, titanium oxide, Black Diamond® (a trademark ofApplied Materials), and/or other suitable mask substrate. The mask 106may include a reflective structure, such as a MultiLayer Mirror (MLM),disposed on the mask substrate. An MLM may include a number ofalternating material layers tailored in thickness and/or material toachieve optimal constructive interference of the radiation reflected ateach material interface while reducing light absorption. In an exemplaryembodiment, an MLM includes 40 pairs of alternating molybdenum andsilicon (Mo—Si) layers. In further exemplary embodiments, an MLMincludes between 20 and 80 pairs of alternating molybdenum and beryllium(Mo—Be) layers. Radiation that reaches the reflective structure of themask is reflected back for use in exposing the photoresist 116 of thetarget substrate 112. Various other layers may be present such as,capping layer(s) and absorptive layer(s) providing the patterning.

While a EUV system is described above, in other embodiments, thelithography system operable to provide an exposure of a substratesuitable for use with the present methods and systems may include asource of various other wavelengths including transmission type opticalsystems; FIG. 2 is exemplary of a highly simplified block diagram of atransmission type optical system.

Similar to the system 100, the exposure system 200 includes a controldevice 202 that may be substantially similar to the control system 118above. The exposure system 200 includes a radiation source 204, anaperture 206, filters 208, illumination optical systems 210, mask stage212, projection optical system 214, and a substrate stage 216. Thesubstrate stage 216 may position a substrate 112, substantially similarto as discussed above. It is noted that the type of photoresist 116 maybe selected to be suitable for the radiation source used.

The radiation source 204 in some embodiments may be a deep ultraviolet(DUV) radiation source. The DUV light source may include exciting amolecule of a noble gas, such as argon (Ar), krypton (Kr), or xenon(Xe), to react with a molecule of a halogen, such as fluorine (F) andchlorine (Cl). Example DUV radiation sources 204 include KrF excimerlaser (for example a wavelength approximately 248 nm) or ArF excimerlaser (for example a wavelength approximately 193 nm). A mask 218disposed on the mask stage 212 may be a transmissive mask. Thetransmissive mask, like a reflective mask discussed above, may furtherimplement resolution enhancement techniques such as phase-shifting,off-axis illumination (OAI), optical proximity correction (OPC), and/orother suitable features. In some embodiments, the lithography system isan immersion lithography system.

The radiation sources 102 and/or 204 in conjunction with theaccompanying components of the lithography system may be operable toprovide different illumination modes or profiles incident a mask 106,218 during the exposure process. For example, during exposure of atarget substrate, the radiation sources 102 and/or 204 in conjunctionwith the accompanying components may be modified to provide a firstillumination mode and a second, different illumination mode. Theillumination modes may different in the portions of the field ofexposure (e.g., pupil) that are “on” versus “off”. In some embodiments,at least one illumination mode is an off-axis, asymmetrical (e.g.,monopole) illumination. In some embodiments, another illumination modeis a symmetrical, multi-pole (e.g., dipole, quadrupole) illumination,which may be off-axis or on-axis illumination. In some embodiments,another illumination mode is a symmetrical illumination including amonopole, annular or other shaped illumination, which may be off-axis oron-axis illumination.

In an embodiment, for an EUV method and/or system, the asymmetricalillumination may be provided by tuning the source, for example, throughthe use of software. For a DUV method and/or system, the source mayprovide asymmetrical illumination by tuning the source, for example, byproviding an off-set to a calibration system that moves a monopole to anoffset location (e.g., from a center location); by physically blocking aportion of the irradiation, for example, blocking one pole of a dipoleillumination; or by modifying the output of the scanner itself.

FIGS. 8A and 8B illustrate asymmetrical, monopole illumination modes orprofiles. The illumination profile may be defined by the size of thepole (e.g., diameter, shape and dimension) of an “on” portion of thepupil, the radial location of the pole, the angle of the pole from agiven origin point, the number of poles, and/or other configurations ofthe “on” portion of the pupil. The FIGS. 8A and 8B are exemplary onlyand non-limiting. The larger circle represents the full pupil, while thesmaller circle represents the pole (or “on” portion transmittingradiation), while the remainder of the available pupil is in an “off”state. Referring to the example of FIGS. 8A and 8B, illustrated arepupils 800, 800′ having a respective, single pole 802, 802′ disposedasymmetrically within the pupil 800, 800′. The poles 802, 802′ areasymmetrical in that they are not symmetrical about the center of thepupil 800, 800′. The pole 802, 802′ represents the “on” state deliveringradiation, while the other portions of the pupil 800 are in an “off”state. It is noted that the circular shape of the pole 802, 802′ is forease of reference only. The pole may similarly be other shapes includingthose defined by an inner and outer sigma and open angle. Theillumination profile may be provided by a controllable illumination modeselection device including elements such as, switchable mirrors,filters, zoneplates, magnetic elements, reflective elements, lens, orother means to direct, shape and control radiation. FIGS. 8C and 8Dillustrate for reference other illumination modes or profiles 804 and804′ where the illumination profile provides a symmetrical irradiation.The poles 806 and 806′ respectively are oriented symmetrically withinthe pupil and about the center point or axis of the pupil 800, 800′. Asabove, the circular shape of the poles 806, 806′ is for reference only.The illumination modes of FIGS. 8C and 8D may be used for exposure ofthe circuit pattern such as discussed with reference to block 320 of themethod 300.

When forming a circuit pattern onto a substrate using an exposureprocess, the lithography systems, such as the system 100 and system 200described above, include focus control components to minimizeout-of-focus states that can occur if the substrate is not at a suitablefocus position. The lithography system is ideally controlled such thatthe “best focus” position is provided (e.g., by movement of thesubstrate stage or other component) in the vertical (height) direction.However, as the feature size of the circuit pattern decreases, the depthof focus (DOF) also decreases giving a smaller range of focus offsetthat the process can tolerate with acceptable performance. Thus withdecreasing circuit pattern sizes, it is increasingly important tocontrol the focus position and therefore, accurate focal measurementmethods and systems are desired. However, sources of focus offsetinclude environmental vibration and intra-control precision (e.g., driftover processed lot to processed lot) of the system. The latter source offocus offset is desirably monitored on a smaller and smaller scale. Inthat regard, certain embodiments of the methods and systems discussedherein are affective in monitoring focus including to a less than 10nanometer (nm) scale.

Referring now to FIG. 3, illustrated is a method 300 of monitoringparameters of a lithography tool such as an exposure tool (or scanner).One parameter that may be monitored may be focus position on a surfaceof a target substrate (e.g., best focus) according to variousembodiments of the present disclosure. Another parameter may be theexposure dose.

The method 300 begins at block 302 where a lithography system isprovided. The lithography system provided may be one implementingreflective or transmissive lithography type optical exposure methods.Example of lithography systems include system 100 and system 200discussed above with reference to FIGS. 1 and 2, respectfully. It isnoted that additional steps can be provided before, during, and afterthe method 300, and some of the steps described can be replaced oreliminated for other embodiments of the method 300. In some embodiments,the block 302 of the method 300 includes processing using thelithography tool one or more substrates such as to form a circuitpattern onto the substrates. This exposure may be performed using anillumination mode or profile that is symmetric in its irradiationprofile of a photomask.

The method 300 proceeds to block 304 where a test pattern is developedfor the monitoring steps discussed below. The test pattern may include aplurality of lines and spaces oriented in an X-direction or Y-direction(the vertical direction of the focal plane being referred to as theZ-direction.) The test pattern is provided such that it is suitable fordetermining a pattern shift due to drifting from nominal defocus or doseof the illumination system as detailed below. The nominal defocus may bethe defocus amount inherent with the illumination system and/orcharacterized at a beginning point of illumination system. In otherwords, a baseline. It may include the defocus understood to exist in theillumination system prior to the processing of wafers (e.g., determinedas part of a preventive maintenance or tool qualification check).

In an embodiment, the test pattern is designed for use of an off-axisillumination by a system providing a radiation beam having anillumination profile of an off-axis, asymmetrical monopole illumination.The asymmetrical monopole illumination profile provides a configurationof a pupil where a single pole (e.g., monopole) is off-set from thecenter of the pupil (e.g., full available illumination field) asdiscussed above. The asymmetrical illumination may be offset to anydirection of the center of the radiation field (e.g., right, left,upwards, downwards). As also discussed above, the illumination profileincluding the asymmetrical, monopole illumination may be provided by acontrollable illumination mode selection device including elements suchas, switchable mirrors, filters, zoneplates, magnetic elements,reflective elements, or other means to direct, shape and controlradiation. It is noted that in some embodiments, the asymmetricalillumination may not be a single monopole but other illumination profile(e.g., multi-pole) but with asymmetrical properties about the centerpoint of the pupil.

In an embodiment, the test pattern is designed for use of an off-axis,asymmetrical, monopole illumination by providing the line/spaces at afirst pitch in some portion(s) of the test pattern and line/spaces at asecond pitch in other portion(s) of the test pattern. The pitch may bemeasured as a width of the line plus a width of the adjacent space. Theportion of the test pattern having the first pitch when irradiated withthe illumination profile gives an asymmetric diffraction of light. Thatis that the radiation from the mask to be delivered toward the targetsubstrate is of multiple orders (1^(st) order, 0^(th) order, 2^(nd)order) which are not symmetrical in state and do not coincide. Thus, dueto differences in reflection angles of the reflected radiation off ofthe mask (in the case of EUV) and in particular off of the patternhaving the first pitch, certain position of the pattern will result inmore reflected light. That is, certain diffraction orders are shadowedand certain diffraction orders are reflected towards the targetsubstrate, resulting in an asymmetry of the diffraction pattern. Inasymmetric diffraction, there is an optical path difference betweendiffraction orders of the diffracted radiation that is dependent uponthe amount of defocus, which leads to the pattern to shifting when it isformed (exposed) as a structure on the target substrate. The testpattern portion providing a pattern that achieves asymmetric diffractionmay be referred to herein as the offset testing pattern (e.g., widepitch).

As introduced above, the test pattern may be further designed to include(in addition to the offset testing pattern) line/spaces at a secondpitch (different than that of the offset testing pattern) in otherportions of the test pattern. This portion of the testing pattern, whenthe pattern has the second pitch, when irradiated with the sameillumination profile provides a symmetric diffraction. The portion ofthe test pattern providing the symmetric diffraction may be referred toas the reference pattern (e.g., dense pitch). The symmetric diffractionprovides optical paths between diffraction orders to be the same andthus, provides convergence. Thus, regardless of the defocus, thereference pattern will be reproduced without pattern shift. The detaileddescription of the asymmetric/symmetric diffraction is shown in FIG. 12.Combining the reference pattern and the offset testing pattern into asingle test pattern provides allows for measurements of the combinationof patterns to determine the amount of pattern offset, and correlatethat to a lithography parameter. That is, the asymmetric diffractionprovided by the offset testing pattern exhibits a pattern shift incomparison to the reference pattern, and that pattern shift can beassociated with or correlated to parameters of the lithography tool.Measurements of the test structure pattern as imaged, including thereference pattern and the offset testing pattern are taken to determineparameters of the lithography tool associated with various illuminationprofiles.

Thus, in block 304 there is provided a test pattern that includes thefirst pitch as an offset test pattern and features at second pitch as areference pattern that allows for quantification of the shift of thepattern which corresponds, or can be correlated to a parameter of thelithography exposure (e.g., defocus amount and/or dose) as discussedbelow. Design of the test pattern is described in further detail withrespect to the method of FIG. 4 below.

In some embodiments, the test pattern may include a plurality of linefeatures and a space pattern repeatedly arranged in an X-direction. Insome embodiments, the test pattern may include a plurality of linefeatures and a space pattern repeatedly arranged in a Y-direction. Thetest pattern may include alternating Line/Space configuration, a Slotsconfiguration, an alternating Contact/Holes configuration. The patterntype can be based on the device layer that is to be patterned. Forexample, in an embodiment, the device pattern is for Contact/Hole devicelayers, and thus, the test pattern is also be designed as Contact/Hole.

Referring to FIGS. 5A and 5B, illustrated are test patterns 500 and 502respectively. In an embodiment, the test patterns 500 and 502 asillustrated are test pattern structures, having been formed on asemiconductor substrate. In other embodiments, the test patterns 500 and502 as illustrated are test patterns as defined on a photomask (orsimply mask). The test patterns 500 and 502 may be formed on a mask suchas described with respect to the systems 100 and/or 200, discussedabove. In an embodiment, the test pattern 500 is used for monitoringand/or controlling a EUV system, such as the system 100 described abovewith reference to FIG. 1. In an embodiment, the test pattern 502 is usedfor monitoring and/or controlling a DUV system, such as the system 200described above with reference to FIG. 2. In an embodiment, the testpattern 502 is used for monitoring and/or controlling an immersionlithography system.

The test pattern 500 includes a plurality of line features 504 and aplurality of space features 506 interposing the line features 504. Theline features 504A are provided at a first pitch and a first width. Theline features 504B are provided at a second pitch and a second width.The line features 504A have a greater width and pitch than the linefeatures 504B. The greater width and pitch features, such as 504A, maybe referred to as wide space and wide CD. The smaller width and pitchfeatures, such as 504B, may be referred to as dense pitch and dense CD.It is noted that a single line feature 504A is illustrated, however thisis not limiting.

In an embodiment, there may be a buffer pattern between the linefeatures 504A and 504B. The buffer pattern (e.g., feature) may providefor a thicker feature in order to improve the patternability of the setof patterns mitigating photoresist development (e.g., photoresistcollapse) issues.

The test pattern 502 includes a plurality of line features 508 and aplurality of space features 510 interposing the line features 508. Theline features 508A are provided at a first pitch and a first width. Theline features 508B are provided at a second pitch and a second width.The line features 508A have a greater width and pitch than the linefeatures 508B.

The line features 504B/508B may be selected as to provide for a widthand pitch that provides for a reference pattern. In other words, theline features 504B/508B are provided such that with the illuminationprofile provided in block 310, symmetric diffraction occurs and evenwith defocus the pattern will not substantially shift. Thus, the portionof the testing pattern 500 having lines 504B provides portions providingreference patterns. Similarly, the portion of the testing pattern 502having lines 508B provides portions providing reference patterns.

The line features 504A/508A may be selected to provide for a width andpitch that provides for an offset testing pattern. In other words, theline features 504A/508A are provided such that with the illuminationprofile provided in block 310, asymmetric diffraction occurs and thepattern will shift in a manner that can be correlated to the defocusamount as discussed below. Thus, the portion of the testing pattern 500having lines 504A provides portions providing offset testing patterns.Similarly, the portion of the testing pattern 502 having lines 508Aprovides portions providing offset testing patterns.

The method 300 then proceeds to block 306 where the test pattern isformed on a mask. In an embodiment, the test pattern 500 is formed on areflective mask such as the mask 106, discussed above with reference toFIG. 1. In an embodiment, the test pattern 502 is formed on atransmissive mask such as the mask 218, discussed above with referenceto FIG. 2.

In an embodiment, the test pattern 500 is formed on a reflective masksuitable for EUV lithography. In an embodiment, the test pattern 502 isformed on a transmissive mask suitable for DUV lithography. However, theprinciples the present disclosure also apply to other mask types.

The method 300 then proceeds to block 308 where one or more targetsubstrates (e.g., wafers) are exposed using the provided lithographysystem. In some embodiments, circuit patterns are exposed onto thetarget substrates. The circuit patterns may be exposed using radiationhaving an illumination profile that is different than that to be usedfor exposing the test pattern. In an embodiment, the illuminationprofile for exposing the circuit pattern(s) are symmetricalillumination, which is described above. For example, the illuminationprofile may be a full pupil, a multi-pole (e.g., dipole, quadrapole)configuration, a monopole, an annular ring or other shaped illuminationprovided the “on” portions of the pupil are symmetric. The illuminationprofile may be be provided off-axis or on-axis. In some embodiments,block 308 is omitted.

The method 300 then proceeds to block 310 where an exposure directed tothe test pattern is performed. The exposure of the test pattern onto thetarget substrate may use the same source as above, but provide adifferent illumination mode or profile. For example, in someembodiments, the exposure of block 308 is performed using a firstillumination mode and the block 310 is performed using a secondillumination mode, different than the first. In an embodiment, thesecond illumination mode is an off-axis, asymmetrical illumination. Inother words, the illumination profile for the illumination of block 310is from a direction inclined with respect to the optical axis andasymmetrical to the optical axis. For example, the illumination profilemay be a monopole or other illumination provided the “on” portions ofthe pupil are asymmetric with respect to the field of the pupil. Thus,between block 308 and block 310 of the method 300, the illuminationshape provided to the mask is adjusted. For example, to provideasymmetric off-axis, monopole illumination in block 310.

In some embodiments, the test pattern structure is formed on the samesubstrate as the circuit pattern as discussed above in block 308. Forexample, in some embodiments, the test pattern may be formed onto a kerfregion or in a dummy area of the substrate. In some embodiments, thetest pattern structure has an overall area of approximately 1 micron(μm) squared. Thus, in some embodiments, despite the illuminationprofile being changed between block 308 and 310, the substrate(including the circuit pattern and the test pattern) is not moved butmaintained on the stage such as stage 112 of FIG. 1 or stage 216 of FIG.2. It is noted that the test pattern exposed in block 310 includes boththe reference pattern and the offset test pattern. In other words, thereference pattern and the offset test pattern are exposed in asimultaneously in a single exposure process.

The method 300 then proceeds to block 312 where a plurality ofmeasurements of the formed test pattern structure is performed on thesubstrate (e.g., wafer) having the test pattern structure exposedthereon. The measurements may be performed by scanning electronmicroscope (SEM). It is noted that in some embodiments the SEM isperformed after not only the exposure of the test pattern, but thedevelopment of said pattern as well.

Using the example of the test pattern 500, the test pattern 500structure having been formed on a target substrate is measured todetermine various aspects of pattern shifting. In an embodiment, a line(or polygon) feature 504B′ is identified for the measurement. Thespecific line feature 504B′ may be identified by experimental and/orsimulation data as providing a suitable sensitivity of its correlationwith exposure parameters (e.g., defocus). That is, the line feature504B′ may be determined such that the resulting plots of the measurementof dimensions based on the position of line feature 504B′ versus alithography parameter is essentially flat as discussed in further detailbelow including with respect to FIGS. 11A, 11B, and/or 11C. In anembodiment, the line feature 504B′ is identified as the n^(th) linefeature from the offset testing pattern features 504A, where n is aninteger greater than 1. In a further embodiment, n equals 3. In anotherembodiment, n equals 5. In some embodiments, n is a number between 2 and6. The identification of line feature 504B′ (and thus, theidentification of “n”) is described below. In sum, the selection of the‘n’ value is the number of features into the array where the proximityeffect is gone. Thus, ‘n’ may be a larger value and still be within thescope of this disclosure. In an embodiment, a measurement 512 (referredto as SUM) is performed between line features 504B′ (e.g., upper andlower). In an embodiment, a measurement 514 (referred to as Space_top orsimply S_top) between 504B′ line feature and an edge of the nearest linefeature 504A. In an embodiment, a measurement 516 (referred to asSpace_low or simply S_low) between 504B′ line feature and an edge of thenearest line 504A. In some embodiments, a single line 504A interposes afirst set of lines 504B and a second set of lines 504B; thus, the S_low516 and S_top 514 are measured to different edges of the same line 504A.Each of the measurements 512, 514, and 516 may be performed by ascanning electron microscope (SEM) and stored such as stored by acontrol system.

Using the example of the test pattern 502, the test pattern 502structure having been formed on the target substrate is measured todetermine various aspects of pattern shifting. In an embodiment, a line(polygon) feature 508B′ is identified for the measurement. The specificline feature 508B′ may be identified by experimental and/or simulationdata as providing a suitable sensitivity of its correlation withexposure parameters (e.g., defocus). That is, the line feature 508B′ maybe determined such that the resulting plots of the measurement ofdimensions based on the position of line feature 508B′ versus alithography parameter is essentially flat as discussed in further detailbelow including with respect to FIGS. 11A, 11B, and/or 11C. In anembodiment, the line feature 508B′ is identified as the n^(th) linefeature from the offset testing pattern features 508A, where n is aninteger greater than 1. In a further embodiment, such as illustrated inFIG. 5B, n equals 5. In another embodiment, n equals 3. In someembodiments, n is a number between 2 and 6.

In an embodiment, a measurement 518 (referred to as SUM) is performedbetween line features 508B′ (e.g., upper and lower). In an embodiment, ameasurement 520 (referred to as Space_right or simply S_right) between508B′ line feature and the edge of the nearest line feature 508A. In anembodiment, a measurement 522 (referred to as Space_left or simplyS_left) between 508B′ line feature and the edge of the nearest 508Afeature. In some embodiments, a single line 508A interposes a first setof lines 508B and a second set of lines 508B; thus, the S_right 520 andS_left 522 are measured to different edges of the same line 508A. Eachof the measurements 518, 520, and 522 may be performed by a scanningelectron microscope (SEM) and stored such as stored by a control system.

FIGS. 5A and 5B are exemplary and other structures may be provided.Other embodiments may be possible including those introducing a firstpitch and a second pitch of a pattern and providing suitablemeasurements thereof. In some embodiments, the suitable measurements area [1] SUM value, a [2] S_first value, and a [3] S_second value (whereS_first and S_second may be left and right or top and bottom asillustrated in FIGS. 5A and 5B). The measurement for the SUM value isequal to value [2] plus value [3] plus 1*wide CD, ide-CD are provided bythe test pattern. With reference to FIG. 5B, Value [2] S_first value canbe 4*dense pitch+1*wide space. The wide space may be provided by thetest pattern. Value [3] can be 4*dense pitch+1*wide space. Withreference to FIG. 5A, Value [2] S_first value can be 2*densepitch+1*wide space. The wide space may be provided by the test pattern.Value [3] can be 2*dense pitch+1*wide space.

The method 300 then proceeds to blocks 314 and 316 where the measurementdata obtained in block 312 is used to determine one or more parametersof the exposure process. In some embodiments, one of blocks 314 or 316is omitted. In some embodiments, the determination of the dose of block314 may be performed but not used to modify a parameter of thelithography system.

In an embodiment, the method 300 proceeds to block 314 where an exposuredose is determined using the measurements obtained in block 312. Forexample, in an embodiment, an optimized exposure dose (EOP) isdetermined. It is recognized that the exposure dose changes with patterndensity.

Referring to FIGS. 6A and 6B, illustrated are exemplary graphs 600 and602. In an embodiment, graph 600 (or plot) is associated with a EUVsystem, such as the system 100 discussed above with reference to FIG. 1.In an embodiment, graph 602 is associated with a DUV lithography system,such as an immersion lithography system similar to the system 200discussed above with reference to FIG. 2. The graphs 600 and 602respectively show a plot of Defocus (nm) to a Sum (nm) measurement.Multiple EOP levels 604, 606, and 608 are plotted for each of graph 600and 602. The EOP level 606 provides a nominal or baseline dose. The EOPlevel 604 shows a decreased EOP level, or 90% of the nominal or baselinedose. The EOP level 608 shows an increased EOP level, or 110% of thenominal or baseline dose. In an embodiment, the EOP level 608 of thegraph 600 shows a 113% of the nominal or baseline dose. In theillustrated embodiment, three EOP levels are provided however, anynumber of EOP levels may be provided on the graphs 600 and/or 602.

In some embodiments, the graphs 600 and/or 602 are provided for a givencritical dimension (CD) or CD range. The CD associated with the graph600 and/or 602 may be substantially similar to the CD of the offsettesting pattern of the test pattern discussed above. In someembodiments, the CD associated with the graphs 600 and/or 602 are the CDassociated with the circuit pattern to be formed using the lithographysystem.

The graphs 600 and/or 602 may be generated using experimental and/orsimulation data from substrates processed by the EUV/DUV systems.Specifically, a significant (e.g., 100s or 1000s) of datapoints relatingto dose/defocus and the resultant SUM measurement may be obtained,plotted, and stored for use with the method 300. It is noted from thegraphs 600 and 602, that each of the EOP levels 604, 606, 608 isrespectively substantially linear; in other words, for a given EOPlevel, the SUM measurement is substantially constant. As discussedherein, including above with reference to block 304 and below withreference to FIGS. 11A, 11B, and/or 11C, the SUM measurement (e.g.,including selection of the n^(th) polygon) may be selected such thatthis property of linearity is produced.

In an embodiment, the SUM measurement 512 of the test pattern 500 isdetermined in block 312 of the method 300 and based on this measurementthe corresponding EOP level, one of EOP levels 604, 606, or 608 of graph600 is determined. For example, in an embodiment SUM is determined to be527 nm and thus, the EOP is determined to correspond to EOP level 604.Thus, the EOP level provided by the lithography system in its currentoperation is determined to be 90% of nominal.

In an embodiment, the SUM measurement 518 of the test pattern 502 isdetermined in block 312 of the method 300 and based on this measurementthe corresponding EOP level, one of EOP level 604, 606, or 608 of graph602 is determined. For example, in an embodiment SUM is determined to be1051 nm and thus, the EOP is determined to correspond to EOP level 604.Thus, the EOP level provided by the lithography system in its currentoperation is determined to be 90% of nominal.

The method 300 then proceeds to block 316 where a focus parameter (bestfocus) is determined also using the measurements obtained in block 312discussed above. The best focus is where the image contrast has amaximum value, the image contrast of a pattern being divided into brightand dark regions between lines/spaces and intermediate regions in thetransition.

Referring to FIGS. 7A and 7B, illustrated are exemplary graphs 700 and702. In an embodiment, graph 700 is associated with an EUV system, suchas the system 100 discussed above with reference to FIG. 1. In anembodiment, graph 702 is associated with a DUV lithography system, suchas an immersion lithography system similar to the system 200 discussedabove with reference to FIG. 2. The graphs 700 and 702 respectively showa plot of Defocus (nm) to a measurement of the test pattern discussedabove, namely Delta S, or the difference between S_top 514 and S_bottom516 with reference to graph 700 and Delta S, or the difference betweenS_left 522 and S_right 520 with reference to graph 702. Multiple EOPlevels 704, 706, and 708 are plotted for each of graph 700 and 702. TheEOP level 706 provides a nominal or baseline dose. The EOP level 704shows a decreased EOP level, or 90% of the nominal or baseline dose. TheEOP level 708 shows an increased EOP level, or 110% of the nominal orbaseline dose. In the illustrated embodiment, three EOP levels areprovided however, any number of EOP levels may be provided on the graphs700 and/or 702.

In some embodiments, the graphs 700 and/or 702 are provided for a givencritical dimension (CD) or CD range. The CD associated with the graph700 and/or 702 may be substantially similar to the CD of the offsettesting pattern of the test pattern discussed above. In someembodiments, the CD associated with the graphs 700 and/or 702 are the CDassociated with the circuit pattern to be formed using the lithographysystem.

The graphs 700 and/or 702 may be generated using experimental and/orsimulation data. Specifically, a significant (e.g., 100s or 1000s) ofdatapoints relating to dose/defocus and the resultant SUM measurementmay be obtained, plotted, and stored for use with the method 300. It isnoted from the graphs 700 and 702, that each of the EOP levels 604, 606,608 is respectively substantially linear; in other words, for a givenEOP level. As discussed herein, including above with reference to block304 and below with reference to FIGS. 11A, 11B, and/or 11C, the S_Delta(e.g., including selection of the n^(th) polygon) may be selected suchthat this property of linearity is produced.

In an embodiment, the S-Delta measurement is determined for the testpattern 500 using the measurements provided in block 312 of the method300. In an embodiment, S_low 516 is subtracted from S_top 514 providingan S_Delta in nanometers. Based on block 314, the corresponding EOPlevel, one of EOP level 704, 706, or 708 of graph 700 is recognized.Based on the S_Delta and the selected EOP level (e.g., using graph 600),a point on the plot of the graph 700 is determined, which provides forthe corresponding Defocus value (nm) to be determined. For example, inan embodiment S_Delta (for test structure 500) is determined to be 1 nmand the EOP is determined to be 90% of nominal as discussed above inblock 314. Thus, Defocus level is determined to be −10 nm offset.

In an embodiment, the S_Delta measurement is determined for the testpattern 502 is determined using the measurements provided in block 312of the method 300. In an embodiment, S_right 520 is subtracted fromS_left 522 providing an S_Delta in nanometers. Based on block 314, thecorresponding EOP level, one of EOP level 704, 706, or 708 of graph 700is recognized. Based on the S_Delta and the selected EOP level, a pointon the graph 702 is determined, which provides for the correspondingDefocus value (nm) to be determined. For example, in an embodimentS_Delta (for test structure 602) is determined to be −8 nm and the EOPis determined to be 110% of nominal as discussed above in block 314.Thus, Defocus level is determined to be −10 nm offset.

In some lithography processes, Bossung curves may be used to understandthe process parameters; Bossung curves provide for CDs as a function offocus and exposure dose. However, for a given CD measurement of a teststructure, a Bossung curve can provide ambiguities as to whichEOP/Defocus combination is indicative of the lithography system (i.e.,there can be multiple conditions on a Bossung curve each providing adifferent defocus value). Thus, the present method 300 providesadvantages of uniquely determining the best focus. For example, bymeasuring the summation or differences of identified target polygons asdiscussed above (see the discussion relating to FIGS. 5A and 5B), theinformation is not limited to a single space or single CD as with aBossung curve. Therefore, ambiguities of different processing conditionsproviding the same CD-output value that can occur with the use ofBossung curves are avoided.

The method 300 then proceeds to block 318 where a parameter of theexposure conditions is modified for an exposure process of a subsequentsubstrate. It is noted that the method 300 may be performed such thatone exposure of the test pattern, described above with reference toblock 310, may be performed for a given number of lots. In anembodiment, block 310 (and analysis of the resulting test structure onthe substrate) may be performed once per lot. In another embodiment,block 310 (and analysis the test structure on the substrate) may beperformed once per several (e.g., 50-100) lots.

In an embodiment, a parameter is modified in the scanner based on theabove analysis of blocks 314 and 316 of the method 300. In anembodiment, a focal parameter is modified. The focal modification may bea modification of the position of the scanner with respect to the targetsubstrate. For example, a focus control unit receives the focusmeasurement result and provides a modification, e.g., drive control ofthe substrate in the vertical axis. In some embodiments, otherparameters are modified with the understanding of the focal condition ofthe system based on the results of the block 316. For example, thecritical dimension target may be modified. It is noted that focalparameters such as best focus may be the same for a given source of thelithography system whether the illumination mode is provided in asymmetrical or asymmetrical manner. In other words, it is independent ofthe illumination profile and the illumination profile changes betweenblock 308 and block 310. Thus, when switching back to the baseline(e.g., production) illumination mode for exposing the circuit patterns,the exposure can be stopped at the appropriate CD due to thenow-quantified defocus condition. For example, in an embodiment, theexposure can stop at a CD=49 nm rather than a baseline of 50 nm due to adefocus condition determined which modifies the nominal CD readoutvalue. In an embodiment, the dose of the exposure (EOP) may bemanipulated for exposure of the circuit parameters.

The method 300 of FIG. 3 may then continue to block 320 where a circuitpattern is exposed on a target substrate using the modified parametersdetermined in block 318. It is noted that in some embodiments, theparameters of the exposure tool may not be modified but results obtainedfrom blocks 314 and/or 316 may confirm current setting(s) of the tooland the exposure may continue as is.

The circuit patterns may correspond to patterns of metal, oxide, orsemiconductor layers that make up the various components of the ICdevice to be fabricated. The various layers combine to form various ICfeatures. For example, a portion of the circuit patterns may includevarious IC features, such as active regions, gate electrodes, source anddrain regions, metal lines, contact holes, contact plugs, via holes, viaplugs, and openings for bonding pads, to be formed in a semiconductorsubstrate (such as a silicon wafer) and various material layers disposedon the semiconductor substrate.

The substrate, for the exposure of the test pattern as well as thecircuit pattern may be a semiconductor wafer. The semiconductor waferincludes a silicon substrate or other proper substrate having materiallayers formed thereon. Other proper substrate materials include anothersuitable elementary semiconductor, such as diamond or germanium; asuitable compound semiconductor, such as silicon carbide, indiumarsenide, or indium phosphide; or a suitable alloy semiconductor, suchas silicon germanium carbide, gallium arsenic phosphide, or galliumindium phosphide. The semiconductor wafer may further include variousdoped regions, dielectric features, and multilevel interconnects (formedat subsequent manufacturing steps). The circuit pattern may be used in avariety of processes. For example, the circuit pattern may be used in anion implantation process to form various doped regions in thesemiconductor wafer, in an etching process to form various etchingregions in the semiconductor wafer, and/or other suitable processes.

The method 300 in some embodiments may continue to perform othersemiconductor device fabrication processes to form circuit devicesassociated with the circuit pattern exposed onto the substrate asillustrated in block 322. The circuit pattern may be associated withvarious integrated circuit devices, such as metal oxide semiconductorfield effect transistors (MOSFET), complementary metal oxidesemiconductor (CMOS) transistors, bipolar junction transistors (BJT),high voltage transistors, high frequency transistors, p-channel and/orn-channel field effect transistors (PFETs/NFETs), including FinFETs),diodes, or other suitable elements.

Referring now to FIG. 4, illustrated is additional details which may beapplied to block 304 of the method 300, which includes developing a testpattern for monitoring a lithography exposure system. It is noted thatas discussed above, the development of the test pattern refers to notonly the line/space pattern, line/space pitch, and line/space widths,but also the measurements that will be taken on said pattern when formedas a test pattern structure on a substrate, such as discussed withreference to block 312 of the method 300.

In an embodiment, the method 400 may begin with block 402 where areference pattern is determined and concurrently therewith block 404where an offset testing pattern is determined. Each of the referencepattern and the offset pattern may be used in conjunction to form a testpattern such as the exemplary test patterns of FIGS. 5A and 5B,discussed above. The offset testing pattern and the reference patternare substantially similar to as discussed above.

Referring to FIG. 10, illustrated is an exemplary comparison ofillumination modes and test pattern pitches that is illustrative of thedetermination of the reference pattern and the offset testing patternselection. Blocks (or columns) 1002 and 1004 illustrate an illuminationprofile 1010, which may be used to fabricate a circuit pattern onto atarget substrate. The illumination profile 1010 of blocks 1002 and 1004provide a symmetrical profile. It is noted that the illumination profile1010 may be optimized for the circuit pattern to be formed. Theradiation 1006 defined by the illumination profile 1010 is incident anexemplary mask 1008. The mask 1008 may be a reflective or transmissivemask, substantially similar to masks 106 and/or 218, discussed above.The radiation after patterning by the mask 1008 is illustrated astransmitted illumination 1006′. With respect to blocks 1002 and 1004,the transmitted illumination has multiple exemplary diffraction ordersillustrated—a first order and 0^(th) order. It is typical that under acondition of defocus certain orders of radiation may be dismissed thuscausing pattern position to be shifted. It is noted that the transmittedillumination 1006′ is illustrated before and after an exemplary lens;however, this is for illustration only and there may be many lens ormirrors directing the illumination 1006′ to the substrate.

In contrast, blocks 1012 and 1014 illustrate an illumination profile1020, which may be used to fabricate a test pattern onto a targetsubstrate according to aspects of the present disclosure. Theillumination profile 1020 of blocks 1012 and 1014 provide anasymmetrical, monopole profile. The radiation 1016 defined by theillumination profile 1020 is illustrated as being incident an exemplarymask 1008. Again, the mask 1008 may be a reflective or transmissivemask, substantially similar to masks 106 and/or 218, discussed above.The radiation after patterning by the mask 1008 is illustrated astransmitted illumination 1016′. The transmitted illumination 1016′ isillustrated as having multiple exemplary diffraction orders—a firstorder and 0^(th) order being illustrated. For block 1014, the radiationafter patterning by the mask 1008 is illustrated as transmittedillumination 1016′ having first order and 0^(th) order illustrated andbeing asymmetrical. It is typical that under a condition of defocuscertain orders of radiation diffracted (in the case of EUV lithography)may be dismissed thus causing pattern position to be shifted. Incontrast, it is noted that the 0^(th) and 1^(st) order for block 1012are symmetric. This is on account of the line features width/pitch ofthe mask 1008 of block 1012 allows for no shift of the imaged pattern.Thus, the pattern provided in block 1012 is illustrative of a referencepattern.

Thus, FIG. 10 is illustrative of manners to determine the referencepattern (width/pitch) for a given illumination profile. That is, it isdesired to determine a polygon width/pitch that provides for symmetricreflection from the mask, as illustrated by block 1012. This allows fora given amount of defocus, the reproduced pattern to be substantiallyunshifted. Conversely, it is desired to determine a pitch that providesfor asymmetric reflection from the mask, as illustrated in block 1014for the offset test pattern. This allows for a given amount of defocus,the reproduced pattern to be shifted by an amount. The amount of shiftcan be correlated with the amount of defocus, as discussed above. Theoffset test pattern (e.g., provided in block 1012) may be substantiallysimilar to the dimensions of the circuit pattern to be formed.

The method 400 may then proceed to block 406 where a plurality ofmeasurements to be taken on the test pattern is determined. Theplurality of measurements may be substantially similar to themeasurements discussed above with reference to block 312. FIGS. 11A,11B, and 11 c are illustrative of three respective exemplary options formeasurements to be obtained from a test pattern 1102. The test pattern1102 may be determined by block 402 and 404 discussed above and/or besubstantially similar to the test patterns discussed above includingwith reference to block 304 and FIGS. 5A and 5B. The test pattern 1102is illustrated as formed as test pattern structure on a target substrateand suitable for capturing dimensions thereof by a measurement device,such as SEM.

Illustrated in Option A is provided a measurement of dimension 1108 anddimensions 1110. Dimensions 1108 and/or 1110A/B may be measured using anSEM. Illustrated in Option B is provided a measurement of dimension 1112and dimensions 1114A/B. Dimensions 1112 and/or 1114A/B may be measuredusing an SEM. As illustrated Option B measurements include the adjacentspace, terminating at the next adjacent line/polygon, as compared toOption A. Illustrated in Option C is provided a measurement of dimension1116 and dimensions 1118A/B. Dimensions 1116 and/or 1118A/B may bemeasured using an SEM. It is noted that dimensions 1116 and 1118A/B aremeasured such that they include a plurality of polygon/lines such asdiscussed above with reference to block 312, for example, measuring upto the n^(th) polygon/line.

For each of Option A, Option B, and Option C illustrated are a pluralityof graphs respectively. The graphs 1104 each illustrate the associateddimension 1108, 1112, or 1116 (nm) respectively plotted against thedefocus (nm) for a plurality of doses (% of nominal). The graphs 1106each illustrate the associated: a difference in measurements 1110A and1110B, a difference in 1114A and 1114B, or a difference in 1118A and1118B respectively plotted against the defocus (nm) for a plurality ofdoses (% of nominal).

The graph 1104 for Option A illustrates a difference in dimension 1108for a given dose of between about 1.5 and about 1.8 nanometers. Incontrast, the graph 1104 for Option B illustrates a difference in thedimension 1112 of 0.2 nanometers. Still further, the graph 1104 forOption C illustrates a difference in the measurement of 1116 of 0.1nanometers. The graph 1104 for Option C produces the most linearresponse. Thus, Option B provides an improved (over that of Option A)accuracy for use to correlate the measurement (1112) to the dose/focusas discussed above with reference to block 314. Similarly, Option Cprovides an improved (over that of Options A and B) accuracy for use tocorrelate the measurement (1116) to the dose/focus as discussed abovewith reference to block 314. Similarly, the respective graphs 1106provide for a greater correlation coefficient (R) in Option C thanOption B, which provides for an improvement over Option A. Thus, FIGS.11A, 11B, and 11C are illustrative of the importance of determining themeasurement criteria for the test pattern selected.

Turning to FIG. 12, illustrated is a block diagram supporting theexplanation of the use of an asymmetric source for exposing the testpattern such as described above with reference to block 404 of FIG. 4 incomparison with a baseline (symmetrical illumination). In comparison tothe asymmetric source, a dipole illumination mode is illustrated asbeing incident a mask, which provides a patterned light as illustratedby the 1^(st) and 0 order transmissions. As illustrated the left of FIG.12, these are symmetrical and thus, in their combination no offset isseen despite a change in focus. In contrast, for the right portion ofFIG. 12 and the provision of an asymmetric source, the pattern shift isquantified from the offset because there is no interference betweensymmetric, patterned light. Thus, certain embodiments of the methodspresented rely on the asymmetric source providing a surprising benefitover that of the symmetric source.

In various embodiments, the technique is performed by using combinationsof dedicated, fixed-function computing elements and programmablecomputing elements executing software instructions. Accordingly, it isunderstood that any of the steps of method 300 may be implemented by acomputing system using corresponding instructions stored on or in anon-transitory machine-readable medium accessible by the processingsystem. Examples of such a system and non-transitory machine-readablemedium are described with reference to FIG. 9. In that regard, FIG. 9 isa block diagram of a lithographic environment 900 according to variousembodiments of the present disclosure.

The lithographic environment 900 includes a control system 902. Thecontrol system 902 includes a processing resource 904 that may includeany number and type of processing elements such as Central ProcessingUnits (CPUs) Graphical Processing Units (GPUs), Application-SpecificIntegrated Circuits (ASICs), microcontrollers, and/or other suitableprocessing elements. The processing resource 904 is coupled to atangible non-transitory machine-readable medium 906 to executeinstructions stored on the medium 906. For the purposes of thisdescription, the tangible non-transitory machine-readable medium 906 maybe any apparatus that can store the program for use by or in connectionwith the instruction execution system, apparatus, or device. The medium906 may include non-volatile memory including magnetic storage,solid-state storage, optical storage, cache memory, and/orbattery-backed Random Access Memory (RAM). In various examples, themedium 906 stores instructions that cause the processing resource 904 toperform the processes of method 300 of determining parameters of alithography system 914, which may be substantially similar to thesystems 100 and/or 200, described above with reference to FIGS. 1 and 2.In some embodiments, the medium 906 stores instructions that cause theprocessing resource 904 to perform the method 1000 described below withreference to FIG. 10, which includes determining a test pattern layoutsuitable for use in determining parameters of a lithography system.

For that purpose, the control system 902 may include a fabricationinterface 908 that sends and receives signals to a lithography systemsuch as the system 100 or the system 200 discussed above. The controlsystem 902 may also include an I/O interface 912 for communicating testinformation and results with a user and/or other computing systems.Accordingly, the I/O interface 912 may include controllers for videooutput (e.g., a GPU), user input (e.g., controllers for a keyboard, amouse, a pen input device, a touchpad, etc.), network controllers (e.g.,Ethernet and/or wireless communication controllers), and/or othersuitable I/O controllers. The control system 902 may be substantiallysimilar to the control systems 118 and 202 of FIGS. 1 and 2respectively.

FIG. 13 is illustrative of implementing the method of FIG. 3 in aproduction line. As illustrated, the sampling of the test pattern isprovided every “J” lots, however, any interval is possible. The 1^(st)Lot includes circuit pattern which is exposed as illustrated in block308 of the method 300. For the 1^(st) Lot, a baseline exposure andmeasurement of the test pattern is then provided. This is as illustratedin blocks 310 and 312 of the method 300 of FIG. 3. In an embodiment, thebaseline exposure provides for a given parameter or set of parameters(e.g., dose, focus). At Lot J, before or after performing irradiation ofthe circuit pattern of Lot J (block 308), another exposure of the teststructure is performed as illustrated in block 310. An image from thisexposure is measured as illustrated in block 312, and a differencedetermined from the baseline image of Lot 1. In an embodiment, a focusis determined to be offset by a given value. This information is thenused to adjust the production exposure conditions as indicated in block318 of the method 300. In the illustrated embodiment, the adjustment isperformed for the J+2 Lot however “2” may be any number depending on thethroughput of the production exposure line. This adjustment allows theJ+2 Lot to be matched to the Lot 1 in terms of resultant focus.

At Lot 2J, before or after performing irradiation of the circuit patternof Lot J (block 308), another exposure of the test structure isperformed as illustrated in block 310. An image from this exposure ismeasured as illustrated in block 312, and a difference determined fromthe baseline image of Lot 1. In an embodiment, a focus is determined tobe offset by a given value. This information is then used to adjust theproduction exposure conditions as indicated in block 318 of the method300. In the illustrated embodiment, the adjustment is performed for the2J+2 Lot however “2” may be any number depending on the throughput ofthe production exposure line. This adjustment allows the 2J+2 Lot to bematched to the Lot 1 in terms of resultant focus. This may continuethroughout the production.

Thus, provided in some embodiments are systems and methods formonitoring and/or controlling lithography tools such as those used forEUV or immersion lithography exposure. By determining test structuresand/or measurement criteria thereof, a suitable correlation between theoffset of a test structure and a defocus amount can be obtained. Thiscan be used to monitor and/or control the exposure of circuit patternsin a lower cost and less time intensive manner. This technique appliesone extra exposure (with 2^(nd) illumination, the asymmetricillumination) on the wafer somewhere without a circuit patterns. Thenthe exposed features are measured by SEM. The focus information is thenextracted from the SEM image. Thus, the present disclosure providesexamples of methods including a method of performing a lithographyprocess for a semiconductor device. The method may include providing atest pattern having a plurality of lines, the plurality of linesarranged at a first pitch and a second pitch. The test pattern isexposed to form a test structure having the test pattern on asemiconductor substrate. The test structure is measured includingdetermining a distance between a first line of the plurality of linesand a second line of the plurality of lines, wherein at least a thirdline of the plurality of lines interposes the first line and the secondline and correlating the distance to an offset of a lithographyparameter. The lithography parameter is then adjusted before exposing acircuit pattern on another semiconductor substrate.

Another method of performing a lithography process includes providing atest pattern. The test pattern includes a first set of lines arranged ata first pitch, a second set of lines arranged at the first pitch, andfurther includes at least one reference line between the first set oflines and the second set of lines. The test pattern is exposed with aradiation source providing an asymmetric, monopole illumination profileto form a test pattern structure on a substrate. The method includesmeasuring the test pattern structure. The measuring includes determininga distance between a first line of the first set of lines and a secondline of the second set of lines; and correlating the distance to anoffset of a lithography parameter. A lithography process is adjustedbased on the offset of the lithography parameter. The adjustedlithography process is then performed to expose a circuit pattern ontoanother substrate.

Another embodiment of a method includes performing an exposure processon a first plurality of semiconductor substrates using a firstillumination mode of a lithography system. A monitoring exposure processis performed on another semiconductor substrate using a secondillumination mode of the lithography system. The monitoring exposureprocess includes irradiating a first region of a test pattern providingfor a symmetrical diffraction and irradiating a second region of thetest pattern providing for an asymmetrical diffraction. The test patternexposed on the another semiconductor substrate is measured to determinea shift of features of the second region of the test pattern. Thedetermined shift is used to determine a defocus amount of thelithography system.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of performing a lithography process fora semiconductor device, the method comprising: providing a test patternhaving a plurality of lines; exposing the test pattern to form a teststructure over a semiconductor substrate; measuring the test structure,wherein the measuring includes: determining a distance between a firstline of the test structure and a second line of the test structure,wherein at least a third line interposes the first line and the secondline; and correlating the distance to an offset of a lithographyparameter; adjusting the lithography parameter based on the measuredtest structure; and using the adjusted lithography parameter to expose acircuit pattern on another semiconductor substrate.
 2. The method ofclaim 1, wherein the determining the distance is performed using ascanning electron microscope.
 3. The method of claim 1, wherein thelithography parameter is one of focus or dose.
 4. The method of claim 1,wherein the plurality of lines includes lines at a first pitch and linesat a second pitch.
 5. The method of claim 1, wherein the measuring thetest structure further includes: determining a first distance between athird line and a first line of the plurality of lines; and determining asecond distance between the third line and a second line of theplurality of lines.
 6. The method of claim 5, further including:correlating a difference between the second distance and the firstdistance to another lithography parameter.
 7. The method of claim 6,wherein the another lithography parameter is a best focus.
 8. A methodof performing a lithography process, the method comprising: expose acircuit pattern on a first substrate using a first illumination mode ofa lithography system; expose a test pattern on the first substrate usinga second illumination mode of the lithography system to form a teststructure; measure a distance between features of the test structure;correlating the distance to an offset of a lithography parameter; andadjusting a lithography process of the first illumination mode based onthe offset of the lithography parameter.
 9. The method of claim 8,wherein the test pattern includes a plurality of lines.
 10. The methodof claim 9, wherein the plurality of lines includes a first line and asecond line arranged at a first pitch and a third line arranged at asecond pitch from the first line.
 11. The method of claim 8, wherein thefirst illumination mode and the second illumination mode are extremeultraviolet (EUV) radiation lithography modes.
 12. The method of claim8, wherein the first illumination mode and the second illumination modeare immersion lithography process modes.
 13. The method of claim 8,wherein the lithography parameter is one of focus or dose.
 14. Themethod of claim 8, further comprising: providing the test pattern on areflective mask.
 15. The method of claim 8, further comprising:providing the test pattern on a transmissive mask.
 16. A method,comprising: performing an exposure process on a first semiconductorsubstrate using a first illumination mode of a lithography system;performing a monitoring exposure process on a second semiconductorsubstrate using a second illumination mode of the lithography system,wherein the monitoring exposure process includes: irradiating at least aportion of a test pattern providing for a symmetrical diffraction; andirradiating at least a portion of the test pattern providing for anasymmetrical diffraction; measuring the test pattern exposed on thesecond semiconductor substrate to determine a shift of features of theat least the portion of the test pattern; and using the determined shiftto determine a parameter of the lithography system.
 17. The method ofclaim 16, further comprising: using the determined parameter of thelithography system when exposing a third semiconductor substrate. 18.The method of claim 17, wherein the exposing the third semiconductorsubstrate is performed using the first illumination mode.
 19. The methodof claim 16, wherein the first illumination mode is symmetricalirradiation.
 20. The method of claim 19, wherein the second illuminationmode is asymmetrical irradiation.